Comments on: Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor

Comments on: Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor https://langbein.org/monte-carlo-simulation-spin-transport-recovery-25-nm-gate-length-ingaas-field-effect-transistor/ Frank C Langbein Tue, 25 Jul 2017 16:08:16 +0000 hourly 1