B. Thorpe, Sophie Schirmer, Karol Kalna, Frank Langbein. Monte Carlo simulation of Spin Transport and Recovery in a 25 nm gate length InGaAs Field Effect Transistor. In: European Materials Resdarch Society 2017 Fall Meeting, Symposium F: Spintronics in semiconductors, 2D materials and topological insulators, F.FP.7, 2017. [WWW]

Monte Carlo simulation of Spin Transport and Recovery in a ...


B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017. [Abstract] [Poster] [WWW]

Spin Recovery in the 25nm Gate Length InGaAs Field Effect ...









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