Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors


B. Thorpe, K. Kalna, F.C. Langbein, S.G. Schirmer. Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors. Submitted 2016. [arXiv:1610.04114] [PDF]

3D model of the studied In_{0.3}Ga_{0.7}As MOSFET showing spin polarization of electrons along n-channel with 4% strain in the [001] direction (Red) and unstrained (Purple).

3D model of the studied In_{0.3}Ga_{0.7}As MOSFET showing spin polarization of electrons along n-channel with 4% strain in the [001] direction (Red) and unstrained (Purple).

By augmenting an in-house developed, experimentally verified Monte Carlo device simulator with a Bloch equation model with a spin-orbit interaction Hamiltonian accounting for Dresselhaus and Rashba couplings, we simulate electron spin transport in a \SI{25}{nm} gate length InGaAs MOSFET. We observe non-uniform decay of the net magnetization between the source and gate electrodes and an interesting magnetization recovery effect due to spin refocusing induced by high electric field between the gate and drain electrodes. We demonstrate coherent control of the polarization vector of the drain current via the source-drain and gate voltages, and show that the magnetization of the drain current is sensitive to strain in the channel, suggesting that the device could act as a room-temperature nanoscale strain sensor.

Cite this page as 'Frank C Langbein, "Monte Carlo Simulations of Spin Transport in Nanoscale InGaAs Field Effect Transistors," Ex Tenebris Scientia, 14th October 2016, https://langbein.org/2569-2/ [accessed 24th May 2017]'.

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