Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors


B. Thorpe, F. Langbein, S. Schirmer, K. Kalna. Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors. 20th International Workshop on Computational Nanotechnology (IWCN), 20-24th May 20-24, 2019. [PDF]

Electron spin offers extraordinarily attractive possibilities in the operation of semiconductor devices thanks to the speed and low energy consumption in its control. One application and future candidate for high performance computing and memory applications with ultra-low power consumption are spin field effect transistors (SpinFETs). Originally proposed by Datta-Das, spin transport in a hot electron transistor was demonstrated. In this work, 2D finite-element quantum-corrected ensemble Monte Carlo simulation code to model a realistic nanoscale In0.3Ga0.7As MOSFET, designed on ITRS prescriptions, was augmented to incorporate electron spin-degrees of freedom and spin-orbit coupling to simulate electron spin transport in a realistic nanoscale device, specifically studying the effect of temperature.

Cite this page as 'Frank C Langbein, "Temperature Affected Non-Equilibrium Spin Transport in Nanoscale In0.3Ga0.7As Transistors," Ex Tenebris Scientia, 20th February 2019, https://langbein.org/temperature-affected-non-equilibrium-spin-transport-in-nanoscale-in0-3ga0-7as-transistors/ [accessed 17th July 2019]'.

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