B. Thorpe, K. Kalna, F. C. Langbein, S. G. Schirmer. Spin Recovery in the 25nm Gate Length InGaAs Field Effect Transistor. In: Proc. Int. Workshop on Computational Nanotechnology, pp. 168-169, Windermere, UK, 6-9 June, 2017. [Abstract] [Poster] [WWW]
Rashba and Dresselhaus mean field vectors $H_R$ and $H_D$ , obtained by averaging over all particles in thin slices across the channel for a single Monte Carlo run ($V_G =0.9 V$, $V_D = 0.5 V$). The z-axis is in plane perpendicular to the channel but for the vector plots the axes have been rotated so that $H_z$ is in the vertical direction for visual clarity.
We augmented an ensemble Monte-Carlo semiconductor device simulator [3] to incorporate electron spin degrees of freedom using a Bloch equation model to investigate the feasibility of spintronic devices. Results are presented for the steady state polarization and polarization decay due to scattering and spin orbit coupling for a III-V MOSFET device as a function of gate voltages, injection polarization and strain.
Received 1 of 4 honourable mentions in the student poster competition.
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